Mesh Generation for the 'Atomistic' Simulation of Variability in InGaAs Implant-Free NanoMOSFETs

摘要

We describe a meshing strategy which allows the placement of the nodes of the mesh in the positions of the atoms in the selected regions of the device. This meshing strategy is used to simulate a 15 nm gate length Implant Free In0.75Ga0.25As MOSFET with a 3D parallel drift-diffusion simulator. We illustrate the use of this mesh in a small study of the impact of random dopants positioned in the ??-doping layer after rigorous calibration against Monte Carlo simulations.