Electric power in ballistic devices: A reformulation with full Coulomb interaction

摘要

An accurate formulation of the electric power in ballistic (classical or quantum) nanoscale devices is presented. The redefinition of the electric power is computed within a many-electron framework (where the dynamic of each electron is determined by its own electric field). The traditional definition of the electric power is compared with the new reformulation presented here for classical double-gate MOSFETs. The accurate results with the many-electron approach show not-negligible discrepancies when compared with the standard definition. Such discrepancies become very important when the single-transistor power is extrapolated to the number of transistors in CPUs.