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Improvement of in-field performance for EuBCO with heavily doped BHO coated conductors by PLD method with high temperature deposition and low temperature annealing

机译:通过PLD法用高温沉积和低温退火,通过PLD方法改进eUBCO与掺杂BHO涂覆导体的现场性能

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Recently,we have found that BaHfO3(BHO)-doped EuBa2Cu30_(7-X)(EuBCO)coated conductors by the combination of the IB AD and PLD methods show high critical current(IC)even in an applied magnetic field.However,for the wide application of BaM03(BMO,M: metal)-doped REBa2Cu30_(7-X)(REBCO)coated conductors to industrial and commercial applications,much higher in-field performance is required.It is known that the critical temperature(TC)of BMO-doped REBCO layers,especially by the PLD method,decreases with the increase in the amount of doped BMO apparently due to the strain of the REBCO induced by BMO doping.Therefore,it is difficult to improve the critical current density(JC)in the applied magnetic field of BMO doped REBCO coated conductors only by increasing the quantity of BMO especially at high temperatures such as 77 K.To solve this problem,we tried to optimize the deposition conditions,especially the deposition temperature and O2 annealing processes for heavily BHO doped-EuBCO layers fabricated by the PLD method.As a result,the combination of high temperature deposition and low temperature O2 annealing was effective in obtaining high Tc and high in-field performance of heavily BMO-doped REBCO coated conductors.The Tc of 10 mol% BHO-doped EuBCO coated conductors was 93.9 K(setting a deposition temperature of 1150 ° C and O2 annealing temperature of 280 ° C)which is nearly the same as that for non-doped EuBCO coated conductors.On the other hand,over-doping is preferred for high in-field Jc.Therefore,a high Jc under a magnetic field was obtained in the BMO-doped REBCO layer annealed at a low temperature.The J_(c(min))of 5 mol% BHO-doped EuBCO coated conductors was 0.62 MA/cm~2 at 77 K and 3 T(setting deposition temperature of 1150 ° C and O2 annealing temperature of 250 ° C).Using these results,we confirm the successful fabrication of heavily BHO-doped EuBCO coated conductors showing high in-field performance by the PLD method.
机译:最近,我们已经发现,通过IB AD和PLD方法的组合,BAHFO3(BHO) - 掺杂的EUBA2CU30_(EUBCO)(EUBCO)涂覆的导体,即使在施加的磁场中,也显示出高临界电流(IC)。然而,为了BAM03(BMO,M:METAL)的广泛应用 - REBA2CU30_(7-X)(REBCO)涂覆的工业和商业应用程序的涂层导体,需要更高的现场性能。众所周知,临界温度(TC) BMO掺杂的雷柏层,特别是通过PLD方法,随着BMO掺杂引起的雷柏的应变而显然,掺杂BMO的量的增加降低。因此,难以提高临界电流密度(JC)在BMO掺杂的rebco涂覆导体的磁场中,仅通过增加BMO的数量,特别是在高温下,例如77 k。解决这个问题,我们试图优化沉积条件,特别是沉积温度和o2退火过程Bho掺杂 - 埃布科层Fabri通过PLD方法。结果,高温沉积和低温O 2退火的组合在获得高TC和大量BMO掺杂的REBCO涂覆导体的高TC和高局部性能方面是有效的。TC为10mol%BHO-掺杂的Eubco涂覆的导体是93.9k(设定1150℃和O2退火温度为280°C的沉积温度),其与非掺杂的EUBCO涂覆的导体几乎相同。另一方面,优选过掺杂因此,对于高型JC.因此,在低温下退火的BMO掺杂的REBCO层中获得磁场下的高JC.j_(c(min))的5mol%Bho-掺杂的eUBCO导体的导体0.62mA / cm〜2以77 k和3 t(设定沉积温度1150°C和02℃的退火温度为250°C)。这些结果,我们确认了大量的Bho-掺杂的Eubco涂层导体的成功制造,显示出高PLD方法的场地性能。

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