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Microstructure and Superconducting Properties of Melt-Processed Bulk Gd123 Single Domain with Gd2Ba4CuMOx (M=Mo and Zr) Additions

机译:熔融加工散装Gd123单结构域的微观结构和超导性能,GD2Ba4cumox(m = Mo和Zr)添加

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Inclusion of the finely dispersed RE2BaCuO5 ( RE211 ) enhances flux pinning in bulk REBa2Cu3O7–. Recently, we tested the effect of Gd2Ba4CuMOx ( Gd2411; M= Zr, Mo) addition on the trapped field and critical current density ( Jc ) in single domain of bulk GdBa2Cu3O7– ( Gd123 ) with the additional amount ranging from 0.2 mol % to 20 mol %, ratio to Gd123. Around the seeding zone a novel band of the second phase distribution was observed for all Gd2411 additional levels. Second phase excess regions were followed by diluted second phase regions, those appeared alternatively, and formed an inhomogeneous band structure, while an uniform distribution of Gd211 appeared from 0.5 cm away from the seed to the edge of domain along 100/010 direction. Jc values strongly depend on the positions and the Gd2411 addition was proved to enhance Jc near the seeding site rather than edge-periphery zone of the bulk disk.
机译:包含精细分散的RE2BacuO5(RE211)增强散对REBA2CU3O7中的磁通钉钉。最近,我们测试了GD2Ba4cumox(GD2411; m = Zr,Mo)在散域Gdba2cu3O7-(Gd123)的单个结构域中的捕获场和临界电流密度(JC)的影响,其附加量为0.2mol%至20摩尔%,比率与GD123。在播种区周围观察到所有GD2411额外水平的新相分布的新带。第二阶段过量区域随后是稀释的第二相区域,替代地出现,并且形成了不均匀的带结构,而GD211的均匀分布从种子沿100/010方向出现在域的边缘0.5cm。 JC值强烈取决于位置,并证明了GD2411添加以增强播种点附近的JC而不是散装盘的边缘区域。

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