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Polarity Inverted GaN for Photonic Crystal Biosensor Applications

机译:光子晶体生物传感器应用的极性反转GaN

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Periodic poling of GaN (alteration of the crystallographic direction along the c-axis) has potential for applications in photonics, sensing, and non-linear optics. One approach to periodic poling of GaN, involves Molecular Beam Epitaxy (MBE) growth of heavily Mg doped GaN which results in inversion of the surface polarity from Ga-polar to N-polar GaN. Fabrication and dry etching of the inversion layer followed by re-growth, and a subsequent highly anisotropic wet etch of re-grown N-polar regions can result in periodically poled GaN with features on either the micro or nanoscale. This paper outlines the design of GaN based photonic crystal biosensors based on periodic poling. Initial results of growth, fabrication, and theoretical modeling will be discussed.
机译:GaN的周期性极化(沿着C轴的晶体方向的改变)在光子学,感测和非线性光学器件中具有应用。 GaN的周期性抛光的一种方法涉及重型Mg掺杂GaN的分子束外延(MBE)生长,从而导致从Ga偏振到N极GaN的表面极性反转。反转层的制造和干蚀刻随后重新生长,并且随后的重新生长的N-极性区域的高度各向异性湿法蚀刻可导致微观或纳米级具有定期抛光的GaN。本文概述了基于周期性抛光的GaN基光子晶体生物传感器的设计。将讨论生长,制造和理论建模的初始结果。

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