@@1 IntroductionBecause of their unusual optical, thermoelectric, and magnetic properties, iron silicides have attracted considerable attention in recent years. Among them, particular attention has been paid to the orthorhombic semiconducting iron disilicide |3-FeSi2 due to its direct band gap of about 0. 85 eV at room temperature, which makes it a candidate material to be used in optoelectronic devices in near-infrared light sources and detectors. In addition to that, β-FeSi2 has good physical and chemical stability at high temperature, good oxidation resistance, nontoxcity, and low cost for the raw
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