Voltage-modulated negative and positive magnetoresistance in La_(0.7)Sr_(0.3)MnO_(3)/Si heterostructure

摘要

Magnetotransport properties have been investigated in a La_(0.7)Sr_(0.3)MnO_(3)/Si heterostructure, which exhibits good rectifying behaviour and voltage-modulated negative and positive magnetoresistance effects. The application of magnetic fields induces an increase in the current at a low bias voltage and a decrease at a high bias. This is caused by the effect of the voltage on the ferromagnetic state in the La_(0.7)Sr_(0.3)MnO_(3) film at the interface by the field-direction-dependent lattice distortion at a high bias voltage.