Graphene is a fascinating material for exploring fundamental science questions as wellas a potential building block for novel electronic applications. In order to realize the fullpotential of this material the fabrication techniques of graphene devices, still in theirinfancy, need to be refined to better isolate the graphene layer from the environment.We present results from a study on the influence of extrinsic factors on the quality ofgraphene devices including material defects, lithography, doping by metallic leads andthe substrate. The main finding is that trapped Coulomb scatterers associated with thesubstrate are the primary factor reducing the quality of graphene devices. A fabricationscheme is proposed to produce high quality graphene devices dependably and repro-ducibly. In these devices, the transport properties approach theoretical predictions ofballistic transport.
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