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Introduction of Fine Engineered Domain Configuration into Potassium Niobate Single Crystals

机译:将良好的工程结构域配置引入铌酸钾单晶

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To induce fine engineered domain configurations into potassium niobate (KNbO{sub}3) single crystals, two kinds of methods were performed, i.e., (1) high DC electric field exposure along the opposite direction of polarization of KNbO{sub}3 single-domain crystals at room temperature, and (2) introduction of randomly oriented fine domain configuration by heat treatment at 700°C and then high DC electric field exposure along [001]{sub}c direction of KNbO{sub}3 multidomain crystals at room temperature. When the method (1) was performed, finally, the poled KNbO{sub}3 crystals became to single-domain state again through the formation of multidomain state. On the other hand, the KNbO{sub}3 multidomain crystals were obtained by using the method (2), and an enhancement of piezoelectric-related properties was observed.
机译:为了诱导铌酸钾(KNO {Sub} 3)单晶的精细工程结构域配置,进行了两种方法,即(1)沿着KNBO {SUB} 3的相反方向的高直流电场曝光。室温在室温下,(2)通过在700°C的热处理中引入随机取向的细结构域配置,然后沿着KNBO {Sub} 3多麦田晶体的{Sub} C方向的高直流电场曝光。温度。当进行方法(1)时,最后,通过形成多畴州再次成为单结构域状态的抛光KNBO {亚}。另一方面,通过使用该方法(2)获得KNO {亚} 3多畴晶体,并观察到压电相关性能的增强。

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