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Fabrication and Application of MoSi{sub}2-Thin-Film Electric Heaters

机译:MOSI {SUB} 2薄膜电加热器的制造与应用

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Thin-film heaters made of molybdenum silicide (MoSi{sub}2) were fabricated using RF magnetron sputtering and their heating characteristics under high vacuum were evaluated. The thin film has the hexagonal crystal structure in contrast to the tetragonal one of the target material. The deposition rate was approximately 2.0 μm/h. Thin-film heaters with MoSi{sub}2 deposited outside of an alumina crucible show almost linear resistance-temperature (R-T) characteristics. At high heating temperatures above 1100°C, the heating area of MoSi{sub}2-thin film decreased owing to a reaction between MoSi{sub}2 and Pt silicide with increasing heating time. The heating characteristics of the thin-film heater can be well improved using in several ways. As ways of improvement, inserting Mothin film as a buffer between the electrode and the thin-film heater or using Mo{sub}3Si-thin film as a heating material can be prevented the decrease in heating area.
机译:使用RF磁纤维溅射制造由硅化钼(MOSI {SUB} 2)制成的薄膜加热器,并评估其在高真空下的加热特性。薄膜具有与四边形之一形成对比的六边形晶体结构。沉积速率约为2.0μm/ h。具有MOSI {SUB} 2的薄膜加热器沉积在氧化铝坩埚外部表示几乎线性电阻 - 温度(R-T)特性。在1100℃高于1100℃的高加热温度下,由于MOSI {SUB} 2和PT硅化物之间的反应,MOSI {SUB} 2薄膜的加热区域随着加热时间的增加而降低。薄膜加热器的加热特性可以通过多种方式得到很好的改善。作为改进的方式,可以防止将Mothin膜插入电极和薄膜加热器之间的缓冲器,或者使用Mo {Sub} 3Si薄膜作为加热材料。

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