A Fast CMOS Self-oscillating Modulator for RF Power Amplifier

摘要

This paper presents a fast CMOS self-oscillating modulator for RF power amplifier. This modulator has been designed in 0.18-μm CMOS technology which occupies an area of 1.5×2 mm{sup}2 and consists of an envelope detector, an envelope amplifier, a fast comparator and an output buffer. The modulator can be applied for both EERPA and DSPA. Simulation results show that the modulator achieves efficiency >81%, the highest output voltage is close to 1.7V, current >100mA.