首页> 外文会议>International Nano-Optoelectronics Workshop >Effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED

【24h】

Effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED

机译：掺杂与活性区域相邻的影响对IngaN蓝色MQW LED效率的影响

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

The effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED was investigated. The tunneling recombination and the Mg diffusion models were used to explain the optimized Mg concentration.

机译：研究了Mg-Doping与活性区域相邻的影响对InGaN蓝色MQW LED的效率进行了研究。使用隧道重组和Mg扩散模型来解释优化的Mg浓度。

著录项

来源
《International Nano-Optoelectronics Workshop 》|2007年||共2页
会议地点
作者
Lai Wang; Yi Luo; Jiaxing Wang; Hongtao Li; Guangyi Xi; Yang Jiang; Changzheng Sun; Yanjun Han;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TP241-53;
关键词

相似文献

外文文献
中文文献
专利

1. Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer [J] . Quantum Electronics, IEEE Journal of . 2010 ,第4期

机译：在MQW有源层和n-GaN覆盖层之间具有InGaN插入层的，基于GaN的蓝色LED的改进性能
2. Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED [J] . WANG Jia-Xing, WANG Lai, HAO Zhi-Biao, 中国物理快报：英文版 . 2011 ,第011期

机译：InGaN / GaN蓝色MQW LED的效率下降效应机理
3. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission [J] . Alam Saiful, Sundaram Suresh, Li Xin, Physica status solidi . 2017 ,第8期

机译：阻挡层铟对有和没有半固态InGaN缓冲层的InGaN多量子阱（MQW）的效率和波长的影响，用于蓝绿色发射
4. Effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED [C] . Wang, Lai, Luo, . 2007

机译：邻近有源区的Mg掺杂对InGaN蓝色MQW LED效率的影响
5. Optical characterization of inhomogeneities in blue-emitting InGaN/GaN MQWs. [D] . Li, Cheng. 2014

机译：发射蓝光的InGaN / GaN MQW中不均匀性的光学表征。
6. Numerical Modeling of the Electronic and Electrical Characteristics of InGaN/GaN-MQW Solar Cells [O] . Bilel Chouchen, Mohamed Hichem Gazzah, Abdullah Bajahzar, 2019

机译：InGaN / GaN-MQW太阳能电池电子和电气特性的数值建模
7. The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency [O] . S. Suihkonen, O. Svensk, T. Lang, 2006

机译：InGaN / GaN mQW氢处理和穿透位错优化对GaN LED效率的影响

Effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED

摘要

著录项

相似文献

相关主题

期刊订阅