Accurate PTV, State, and ABB Aware RTL Blackbox Modeling of Subthreshold, Gate, and PN-Junction Leakage

摘要

We present a blackbox approach to model leakage currents of RTL data-path components. The model inputs are temperature, V_(DD), body voltage of NMOS and PMOS and the bitvector at the input. Additionally, the model accepts a statistical Gaussian variation introduced by intra-die and systematic variation introduced by inter-die. Both variations can be given independently for each BSIM-level process parameter; in this work we evaluate variation of channel length, gate-oxide thickness and channel doping. Model output is the sum of subthreshold, gate, and pn-junction leakage. The evaluation of an RT component can be done in milliseconds and the result for the 45nm and 65nm BPTM technology is within 2% against single BSIM4.40 evaluation and within 5% against statistical BSIM4.40 evaluation assuming 1% variation of the process parameters.