Silicon Texturing Under Negative Potential Dissolution (NPD) Conditions

摘要

"As - cut" (111) oriented p-type silicon can be textured via NPD process at potentials below -10 V in KOH concentrations between 16 and 32% wt. The surface of textured silicon is characterized with morphology of arrayed pits in the shape of flat bottomed triangles. It was established that the morphology of textured (111) silicon surface, as well as a current-time profile recorded during texturing via NPD are strongly dependent on the applied potential. Increase in KOH concentration and a negative shift in the applied potential significantly reduce texturing time.