SPECTROSCOPIC ANALYSIS OF A CANDIDATE TWO-QUBIT SILICON QUANTUM COMPUTER IN THE MICROWAVE REGIME

摘要

We report low temperature electron-transport measurements on two single-electron transistors operatedsimultaneously and coupled capacitively to two isolated double quantum-dots in silicon. The gate voltage dependencies and microwave induced responses are presented. A gate-voltage dependent anti-crossing type response with effective Q-value approx10~(5) and splitting energy 91 neV is observed. The sharp resonance peaks are attributed to population of charge states due to photon absorption from the incident microwave irradiation, and the peak splitting is attributed to the coupling between the isolated double quantum-dots.