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CHARACTERIZATION OF CHARGE STORAGE IN ALD NANOLAMINATES

机译:ALD纳米胺储存的表征

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Charge storage in ALD nanolaminates is characterized. In this work Al_2O_3/HfAlO/Al_2O_3 and SiO_2/HfAlO/SiO_2 nanolaminates are made on p-substrates with all-ALD processes in a single process module. A metal Hg electrode probe was used to form MIS structures for standard and stressed electrical measurements. Measurements of charge storage, its reversibility and stability were carried out. A signature of positive trapped charge under negative bias stress to the electrode and a signature of negative trapped charge under positive electrode bias stress are observed. Certain Al_2O_3/HfAlO/Al_2O_3 structures exhibit larger storage efficiency than their SiO_2/HfAlO/SiO_2 counterparts.
机译:在ALD纳米胺中的电荷储存的特征在于。在该工作中,AL_2O_3 / HFALO / AL_2O_3和SIO_2 / HFALO / SIO_2纳米胺由单个过程模块中的全ALD工艺进行P基板。使用金属Hg电极探针形成标准和应力电测量的MIS结构。电荷储存的测量,进行其可逆性和稳定性。观察到对电极的负偏置应力下的正被捕获的电荷的签名和在正电极偏压下的负电极偏压下的负捕获电荷的特征。某些AL_2O_3 / HFALO / AL_2O_3结构比其SIO_2 / HFALO / SIO_2对应物表现出较大的储存效率。

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