Large area transparent organic light-emitting device by using PFN　modified ZnO as electron transfer layer

摘要

Transparent light-emitting devices based on organic optoelectronic materials and transparent electrodes can have broadimpact on amount of areas including building decoration, smart displays and lighting system. In this work a transparentorganic light-emitting device (TOLED) with a large area is demonstrated by using an inverted architecture. A polymer ofploy[(9,9-bis(3’-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctyl)fluorene)] (PFN) is utilized to modifythe energy level and morphology between ZnO and organic optoelectronic material. As a result, a brightness of ～1000cd/m~2 is obtained from both sides of the transparent device with a working area of 1 cm~2. This work might inspire apromising approach for the fabrication of TOLEDs for both information display and solid-state lighting.