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1V Transimpedance Amplifier in 90nm CMOS for Medical Ultrasound Imaging

机译:用于90nm CMOS的1V跨阻抗放大器用于医疗超声成像

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In this paper we present the measurement results of a 1V transimpedance amplifier designed in a 90nm CMOS technology as an analog front-end for Capacitive Micro machined Ultrasound Transducers (CMUTs) for medical ultrasound imaging. The proposed amplifier is designed to amplify the signals from 15MHz to 45MHz with a center frequency of 30MHz. The measurements show that the proposed amplifier achieves a voltage gain of 15.5 dB, an output noise power spectral density of 0.0497 (μV)/SQRT(Hz) at a center-frequency of 30 MHz, and a total harmonic distortion of -28.8 dB, at 400mV p-p output voltage at 30 MHz input signal frequency. It draws only 450 μA current from a 1-V power supply. The proposed transimpedance amplifier was fabricated in a 90-nm CMOS technology as it is intended for intravenous medical ultrasound imaging, which demands smaller area for the front-end amplifiers. Area measured to be about 26 μm × 26 μm only per amplifier.
机译:在本文中,我们介绍了在90nm CMOS技术中设计的1V跨阻抗放大器的测量结果,作为用于医疗超声成像的电容微加工超声换能器(CMUT)的模拟前端。所提出的放大器旨在将15MHz的信号放大到45MHz,中心频率为30MHz。测量结果表明,所提出的放大器实现了15.5dB的电压增益,其中心频率为30MHz的0.0497(μV)/ SQRT(HZ)的输出噪声功率谱密度,以及-28.8dB的总谐波失真,在400mV PP输出电压下以30 MHz输入信号频率。它仅从1-V电源绘制450μA电流。所提出的缩减放大器以90nm CMOS技术制造,因为它适用于静脉内医学超声成像,这需要前端放大器的较小区域。仅测量的区域仅为每个放大器为约26μm×26μm。

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