Modular layout-friendly cell library design applied for subthreshold CMOS

摘要

A new method for designing digital cell libraries is presented where basic building blocks for logic and memory may be built from identical stacks of transistors in series, only, simplifying the design. Simulations in subthreshold operation is included, suggesting that the method could in principle be used for any synchronous finite state machine. A standard 4 transistor implementation and an 8-transistor version using our suggested approach, having equal total areas, are compared using statistical simulations in 65 nm CMOS, taking local variations into account. The average standard deviations of circuit delays for the traditional NAND implementation were then less than half (44 %), when compared to the new 8 transistor implementation. Anyway, for the same sizing, the traditional NAND2 had about twice the total active area, about 37 % higher static power consumption, 127 % higher active power consumption and about 51 % higher energy per operation, according to simulations. The static power consumption was also about 33 % higher for the traditional NAND, compared to the suggested approach based on combining a couple of 4-transistor "slices". Combining identical "slices" of transistors enabling in principle a range of combinatorial and memory building blocks could greatly simplify library cell design, or subsets of cell libraries.