Structural Characterisation of GaP <111>B Nanowires by HRTEM

摘要

GaP <111>B nanowires are dominated by (111) twins orthogonal to the growth direction and show well-developed {111} side-facets. Based on this, a 3D-model has been constructed with a cross-section of an octahedron used as a building block. The twins can be of ortho- or para type i.e. by 60° about the growth axis or 180° in the twin plane. The segment thickness variation follows an exponential distribution with a clear dependence on growth temperature. Multislice simulations show different features of the twin types that are useful for further characterisation.