Monolithic Integration of Trench Power MOSFET with Schottky Diode and Performance Benefits to DC-DC Conversion

摘要

Monolithic integrated MOSFET and Schottky diode device is developed to reduce Q_(rr) and dead time losses in DC-DC synchronous buck conversion. This paper reports a new device that has achieved over 29% lower reverse recovery charge (Q_(rr)) and 24% lower forward voltage drop (V_f) without compromising MOSFET device Figures of Merit. The in-circuit efficiency increases by 1.1% at 1MHz with the monolithic device as the sync FET. The performance improvement enhances as switching frequency and current increase.