A new generation of 600V GaAs Schottky diodes for high power density PFC applications

摘要

A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs vs. SiC are compensated by lower MOSFET losses due to the GaAs' lower junction capacitance. Given the cost advantage and ruggedness of GaAs compared to SiC technology, this new GaAs diode is a very promising device for high frequency and high power density applications.