IGBT with monolithically integrated Diode replaces MOSFET in electronic Lamp Ballast with Halfbridge Topology

摘要

The half bridge topology in zero voltage switching (ZVS) mode is widely known as state-of-the-art in electronic lamp ballast systems. So far, this was the domain of standard MOSFET. Infineon Technologies introduced recently a novel IGBT with monolithically integrated diode (LightMOS) which is able to replace MOSFET in electronic lamp ballast. This paper compares the basic properties of LightMOS and standard MOSFET. It will further line out what consequences those properties have on circuit design and thermal management in ballast systems and which ones have to be considered in order to benefit most from the unique features of this component. Finally, a comparison of the operating behaviour in a soft switching lamp ballast is given.