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IGBT with monolithically integrated Diode replaces MOSFET in electronic Lamp Ballast with Halfbridge Topology

机译:具有单片集成二极管的IGBT将MOSFET替换为具有半桥拓扑的电子灯镇流器中的MOSFET

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The half bridge topology in zero voltage switching (ZVS) mode is widely known as state-of-the-art in electronic lamp ballast systems. So far, this was the domain of standard MOSFET. Infineon Technologies introduced recently a novel IGBT with monolithically integrated diode (LightMOS) which is able to replace MOSFET in electronic lamp ballast. This paper compares the basic properties of LightMOS and standard MOSFET. It will further line out what consequences those properties have on circuit design and thermal management in ballast systems and which ones have to be considered in order to benefit most from the unique features of this component. Finally, a comparison of the operating behaviour in a soft switching lamp ballast is given.
机译:零电压切换(ZVS)模式下的半桥拓扑在电子灯镇流器系统中被广泛称为最先进的。到目前为止,这是标准MOSFET的领域。 Infineon Technologies最近引入了一种具有单片集成二极管(灯光)的新型IGBT,其能够更换电子灯镇流器中的MOSFET。本文比较了灯光和标准MOSFET的基本特性。它将进一步介绍这些性能对镇流器系统中的电路设计和热管理的影响,并且必须考虑哪些属性以便从该组件的独特特征中受益。最后,给出了软开关灯镇流器中的操作行为的比较。

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