Defect repair of TaGeN absorber layer - (PPT)

摘要

Absorber layer pattern defect was repaired using AFM nano-machining. Good wafer print results were obtained at Z-bias 5nm. Thin TaGeN remained at Z-bias 0nm and remained defect pattern was transferred to wafer. TaN absorber material is hard and AFM Tip was rapidly worn during the defect repair process. This tip damage caused profile variation at defect repaired region and affected to wafer print results.