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Reducing measurement uncertainty drives the use of multiple technologies for supporting metrology

机译:减少测量不确定性驱动使用多种技术来支持计量

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Perhaps never before in semiconductor microlithography has there been such an interest in the accuracy of measurement. This interest places new demands on our in-line metrology systems as well as the supporting metrology for verification. This also puts a burden on the users and suppliers of new measurement tools, which both challenge and complement existing manufacturing metrology. The metrology community needs to respond to these challenges by using new methods to assess the fab metrologies. An important part of this assessment process is the ability to obtain accepted reference measurements as a way of determining the accuracy and Total Measurement Uncertainty (TMU) of an in-line critical dimension (CD). In this paper, CD can mean any critical dimension including, for example, such measures as feature height or sidewall angle. This paper describes the trade-offs of in-line metrology systems as well as the limitations of Reference Measurement Systems (RMS). Many factors influence each application such as feature shape, material properties, proximity, sampling, and critical dimension. These factors, along with the metrology probe size, interaction volume, and probe type such as e-beam, optical beam, and mechanical probe, are considered. As the size of features shrinks below 100nm some of the stalwarts of reference metrology come into question, such as the electrically determined transistor gate length. The concept of the RMS is expanded to show how multiple metrologies are needed to achieve the right balance of accuracy and sampling. This is also demonstrated for manufacturing metrology. Various comparisons of CDSEM, scatterometry, AFM, cross section SEM, electrically determined CDs, and TEM are shown. An example is given which demonstrates the importance in obtaining TMU by balancing accuracy and precision for selecting manufacturing measurement strategy and optimizing manufacturing metrology. It is also demonstrated how the necessary supporting metrology will bring together formerly unlinked technology fields requiring new measurement science. The emphasis on accuracy will increase the importance and role of NIST and similar metrology organizations in supporting the semiconductor industry in this effort.
机译:也许在半导体微光刻之前从未有过测量的准确性的兴趣。这一兴趣在我们的惯性计量系统以及验证的支持计量中介绍了新的需求。这也对新测量工具的用户和供应商负担,这两个挑战和补充了现有的制造计量。 Metrology群落需要通过使用新方法来评估Fab Metrolologies的新方法来应对这些挑战。该评估过程的一个重要部分是能够获得接受的参考测量作为确定在线关键尺寸(CD)的准确性和总测量不确定性(TMU)的方式。在本文中,CD可以表示任何关键尺寸,包括例如特征高度或侧壁角度的措施。本文介绍了在线计量系统的权衡以及参考测量系统(RMS)的局限性。许多因素会影响每个应用,例如特征形状,材料特性,接近度,采样和关键尺寸。考虑这些因素以及计量探针尺寸,相互作用体积和探测类型,例如电子束,光束和机械探针。随着特征的大小缩小到100nm的一些参考计量的阶段,诸如电确定的晶体管栅极长度。 RMS的概念扩大以展示如何在达到准确性和采样的正确平衡时如何实现多种衡量标准。这也用于制造计量学。示出了CDSEM,散射,AFM,横截面SEM,电确定CD和TEM的各种比较。给出了一个例子,其通过平衡精度和精度来获得用于选择制造测量策略和优化制造计量来获得TMU的重要性。还证明了必要的支持计量如何将带来以前需要新的测量科学的未解释的技术领域。重点是准确性将提高NIST和类似计量组织在这项工作中支持半导体行业方面的重要性和作用。

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