Energy Band Diagram of the Electrochemical Corrosion of n-Si(100) in Hf

摘要

The energy band diagram resposible for electrochemical etch of n-Si (100) in HF solutions in the absence and presence of illumination was contstructed. This diagram was useful to estimate the activation energy for the photo-electrochemical etching system. Study in kinetics demonstrated that the etching rate of the silicon increases to a maximum with an increase of HF from 0.5 to 2.0 M, then decreases with further increase in HF concentrations. On basis of the energy band diagram established, we discuss the etching mechanism in detail and elucidate the HF concentration effect on the photo-electrochemical etching reaction.