Scribing of thin sapphire substrates with a 266-nm Q-switched solid-state laser

摘要

Thin sections of single-crystal sapphire are favored as substrates for the epitaxial deposition of gallium nitride and other Ⅲ-Ⅴ and Ⅱ-Ⅵ thin films used in the fabrication of electro-optic devices such as blue-green LEDs and laser diodes. Due to difficulties commonly encountered in cutting this hard material, alternatives to traditional mechanical processing techniques are of particular interest. This paper reviews a recent study characterizing the scribing of sapphire using the tightly focused output of an ultraviolet wavelength pulsed solid-state laser.