SiC-JFET-Cascode: State-of-the-Art, Performance and Application

摘要

The development of silicon carbide power devices is encouraged by their superior static and especially dynamic properties compared to equivalent silicon devices. Low specific on-resistance for high breakdown voltages and dynamics properties comparable to low voltage silicon devices are suggested to be the most outstanding features of SiC power switching devices. In order to illustrate these expectations on real devices, vertical normally-on JFETs with blocking voltages of about 1300..1500V and a specific on-resistance of ..20..mΩcm~2 in cascode configuration assemblied in a new package are discussed. Some first experiences in a JFET-SMPS-flyback converter application for 48V/600W output parameters is presented.