State-of-the-art low frequency noise performance of n-MOSFET for analog/ RF applications

摘要

In this paper, we present the results of low frequency noise (LFN) characterization of n-MOSFET. We are going to show that the device treated with the new anneal step at the end of the process shows outstanding LFN performance. Results demonstrate that the new implemented process change can improve the noise level up to - 6x. The LFN variability of the device under test improved up to similar to 2x.