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0.13-#x03BC;m SiGe BiCMOS radio front-end circuits for 24-GHz automotive short-range radar sensors

机译:0.13-μmSiGe BICMOS无线电前端电路用于24 GHz汽车短程雷达传感器

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This paper presents the key blocks of a 24-GHz front-end for vehicular short-range radar sensors implemented in a 0.13-μm SiGe BiCMOS process. In particular, a three-stage low-noise amplifier with transformer-based loads, a frequency synthesizer, consisting of 24-GHz voltage-controlled oscillator in closed loop with an N-integer PLL, and an ultra-wideband transmitter based on a RF current steering switch are detailed. The low-noise amplifier provides an outstanding power gain of 35 dB and a noise figure as low as 3.4 dB, guarantying an input 1-dB compression point of −12 dBm. The transmitter is able to deliver 0-dBm output power at 24 GHz, complying with 1-ns pulse transmission requirements.
机译:本文介绍了在0.13-μmSiGeBICMOS工艺中实现的车辆短程雷达传感器24-GHz前端的关键块。特别地,具有基于变压器的负载的三级低噪声放大器,频率合成器,由闭环中的24-GHz电压控制振荡器,基于N-INTEGER PLL,基于RF的超宽带发射器电流转向开关详细。低噪声放大器提供35 dB的出色功率增益和低至3.4 dB的噪声系数,保证输入1-DB压缩点-12 dBm。发射器能够以24 GHz提供0-DBM输出功率,符合1-NS脉冲传输要求。

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