Spin-polarized charge densities in (In,Ga,Mn)As-based Diluted Magnetic Semiconductor ternary and quaternary alloy heterostructures

摘要

In this work we present the electronic band structures, and the spin-polarized charge concentrations of selected AlAs/(InGaAs/Ga1–xMnx As) × n/AlAs and AlAs/ (GaAs/InGa1–xMnx As) × n/AlAs systems. The exchange-correlation, the split-off strain and the polarization effects are taken into account in a six-band Luttinger-Kohn (LK) model, solved self-consistently with the Poisson equation. Even for a small In content, the strain effects are shown to be important in order to maximize the heavy hole charge distribution, facilitating the spin polarization separation. From the results one can determine a set of parameters that maximize the presence of polarized charge distributions in the non-magnetic layers, enhancing the mobility of the carriers in the system.