Time Domain Terahertz Spectroscopy of the Magnetic Field Induced Metal-Insulator Transition in n:InSb

摘要

Temperature (T) and frequency () dependent conductivity measurements are reported for n-type indium antimonide (InSb) around the magnetic field induced metal-insulator transition (MIT). For the sample with electron density n= 2.15×1014 cm–3, the critical field is observed at ~0.7 T in dc transport measurements. The frequency dependent conductivity (w) measured via terahertz time domain spectroscopy indicates a higher critical field ~1.2 T. Both dc(T) and 1(w) at low temperatures show power law dependence with exponents of α=1.2.