In-plane tunneling spectroscopy of a two-dimensional electron gas through a one-dimensional barrier

摘要

The direct observation of Fermi-edge effects in an in-plane GaAs/AlGaAs tunneling structure consisting of a two-dimensional electron gas as electrodes is reported. A one-dimensional tunneling barrier has been fabricated using atomic force microscope lithography. The application of a bias across the potential barrier enables tunneling of electrons. The differential conductance vs. dc bias shows characteristic tunneling spectra with distinct features at biases corresponding to the Fermi energy.