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Theoretical Description Of The Electronic Coupling Between A Wetting Layer And A QD Superlattice Plane

机译:润湿层和QD超晶格平面之间的电子耦合的理论描述

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New results on the simulation of 2D Quantum Dots (QD) InAs/InP superlattices, emitting at 1.55 μm, telecommunication wavelength, are presented here. Using the Fourier-transformed Schr?dinger equation, we describe the electronic coupling between a wetting layer (WL) and the QD superlattice. It is shown that the increase of quantum dot density, induces a fragmentation of WL density of states, and the apparition of localized states. The results shows that WL and QD have to be considered as a unique system, in strong coupling conditions.
机译:在此处展示了2D量子点(QD)INAS / INP超晶片的新结果,在此处发出1.55μm,电信波长。使用傅里叶变换的SCHR?Dinger方程,我们描述了润湿层(WL)和QD超晶格之间的电子耦合。结果表明,量子点密度的增加,诱导了各种态的碎片,以及局部状态的幻影。结果表明,在强耦合条件下,WL和QD必须被视为独特的系统。

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