Low-Frequency Noise Analysis in HfO_(2)/SiON Gate Stack nMOSFETs with Different Interfacial Layer Thickness

摘要

Low-frequency noise of HfO_(2)/SiON gate stack nMOSFETs with different interfacial layer (IL) thickness is investigated. All devices show a typical 1/f~(gamma)-like noise with frequency exponent (gamma) equal to 1 and its dominant noise mechanism is found to be number fluctuations of channel carriers. The thicker-IL devices show lower noise characteristics and trap density than that of thinner-IL devices because SiON that has lower bulk trap density than that of HfO_(2) acts as a major noise source in the case of thicker-IL devices.