Ferromagnetic State of GdN Thin Film Studied by Ferromagnetic Resonance

摘要

Magnetic semiconductor GdN thin film has been studied by a conventional X-band electron spin resonance (ESR). Electron paramagnetic resonance (EPR) of GdN is observed at 100 K while the ferromagnetic resonance (FMR) is clearly observed at 4.2 K, which is confirmed by the typical angular dependence of FMR. The result will be discussed in connection with the magnetic properties obtained previously by our SQUID magnetometer measurement.