Write-Once-Read-Many (WORM) Times Memory Devices Based On The Composite Of Vulcan XC-72/Poly(4-vinylphenol)

摘要

We fabricated write-once-read-many (WORM) type organic memory devices in 8 X 8 cross-bar structure. The active material for organic based WORM memory devices composed of mixture of both poly(4-vinyphenol) (PVP) and Vulcan XC-72s. From the electrical characteristics of the WORM memories, we observed two different resistance states, low resistance state and high resistance state, with six orders of ON/OFF ratio (I_(ON)/I_(OFF) approx10~(6)). In addition, the WORM memory devices were maintained for longer than 50000 seconds without any serious degradation.