Quantum Hall Effect and Spin Resolved Anti-crossing of Landau Levels in A1GaSbAs/InAs and AlInSb/InAsSb Quantum Wells

摘要

We have investigated transport properties in InAs/AIGaSbAs and InAsSb/AlInSb quantum wells (QW) in the quantum Hall regime. The carrier density in InAs QW is tuned by using a front gate bias, and the contour plot of resistance as a function of perpendicular magnetic field and gate voltage reveals the spin-resolved subband-Landau-level coupling in tilted magnetic fields. An anomalous transport occurred by the coexistence of electrons and holes in the system has been observed both in InAs and InAsSb QWs.