High-voltage tangent delta determination for dielectric barrier discharge intended materials

摘要

The measurement of dissipative factor tan delta for various commercial types of Al_(2)O_(3) ceramics and Al_(2)O_(3) ceramics doped with TiO_(2) is presented. The measurements were done at low (1V) and high voltage (5 kV) experiment setup. The clear differences were observed as the level of dissipative factor was up to 7 times higher for materials tested at high voltage conditions. This result is of importance for designing the large scale DBD plasma reactors, where the economy of the process needs to be pursued. The lowest values of dissipative factor for both low and high voltage measurements were obtained for the low-sintering temperature, Taimicron powder based ceramics prepared in our laboratory. The value of dissipative factor remained low even after adding 5 wt. percent of TiO_(2) admixture.