The Study of Crystallization Process of As-deposited Amorphous Phase Change Materials by in-situ Annealing Experiments

摘要

The crystallization process of two types of phase change materials (Ge_2Sb_2Te_5 and AgInSbTe) has been studied by in-situ annealing experiments in the column of a transmission electron microscope. Under the same heating rate (7.5K/s), the Ge_2Sb_2Te_5 material starts to nucleate at 170 °C, while AgInSbTe starts to nucleate at 250 °C. The measured nucleation rate of Ge_2Sb_2Te_5 is 8.2 * 1014 cm~(-3)s~(-1) larger than nucleation is dominant for both Ge_2Sb_2Te_5 and AgInSbTe with ZnS-SiO_2 as the dielectric layer in the thinned samples.