Infra-red focal plane arrays: state of the art and development trends

摘要

Development and production of up-to-date IR focal plane arrays (FPA) in leading foreign countries are analyzed. Cadmium-mercury telluride (CMT) FPA are discussed for near, middle and long infra-red (IR) ranges including those ones operating in the time delay and integration (TDI) mode; FPA of indium antimonide, platinum suicide, lead selenide and telluride; quantum well infra-red photodetectos (QWIP) based on heterostructures of gallium arsenide/gallium-aluminum arsenide; uncooled FPA - microbolometric and pyroelectric; FPA of lead sulfide and indium-gallium arsenide; deep-cooled FPA of extrinsic silicon. Trends of further development of FPA for the thermal imaging systems of a new generation are discussed.