首页> 外文会议>International Conference on Advanced Information Networking and Applications >SSR: A Stall Scheme Reducing Bubbles in Load-Use Hazard of RISC-V Pipeline
【24h】

SSR: A Stall Scheme Reducing Bubbles in Load-Use Hazard of RISC-V Pipeline

机译:SSR:失速方案减少了RISC-V管道的负载危险中的气泡

获取原文

摘要

Modern processors usually adopt pipeline structure and often load data from memory. At that point, the load-use hazard will inevitably occur, which usually stall the pipeline and reduce performance. This paper introduces and compares two schemes to solve load-use hazard. One is the traditional scheme that detect hazard between ID stage and EXE stage, which stalls the pipeline and insert bubbles between the two instructions. In the scheme we proposed, we add a simple bypass unit between EXE and MEM stage that disables the stall of load-use hazard caused by the traditional scheme, which can reduce the bubble between the two instructions. It's quite a considerable benefit in eliminating bubbles especially in the long pipeline or programs of plenty load instructions. The scheme was implemented in the open source RISC-V SoC generator Rocket-chip and synthesized in SMIC 130-nm technology. The results show that the performance of the latter scheme is increased by 6.9% in the Dhrystone benchmark with the reasonable cost of area and power.
机译:现代处理器通常采用管道结构,并经常从内存加载数据。此时,将不可避免地发生负荷危险,这通常会停止管道并降低性能。本文介绍并比较了两种方法来解决载荷危险。一个是检测ID阶段和epe阶段之间的危险的传统方案,其停止管道并在两个指令之间插入气泡。在我们提出的该方案中,我们在EXE和MEM阶段添加一个简单的旁路单元,该单元禁用由传统方案引起的载荷危险的档位,这可以减少两条指令之间的气泡。在消除泡沫中,特别是在大量负载指令的长管道或计划中,这是相当大的好处。该方案是在开源RISC-V SoC发电机火箭芯片中实施的,并以SMIC 130-NM技术合成。结果表明,DHRYSTONE基准,后一级方案的性能增加了6.9%,采用合理的面积和功率成本。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号