APPLICATION OF CHALCOGENIDE VITREOUS SEMICONDUCTORS IN MANUFACTURING HOLOGRAPHIC PROTECTIVE ELEMENTS

摘要

This report is aimed to review obtained in Institute of Semiconductor Physics of National Academy of Sciences of Ukraine results of investigations of phototechnical performances inherent to layers of chalcogenide vitreous semiconductors with As_(40)S_(60-x)Se_x composition (x=0...20) as a medium for recording holographic protective master-elements. Such inorganic resists are sensitive to visible and ultraviolet radiation and electron beams, which enable one to produce master optical-digital holographic elements possessing many safety levels. When exposing photoresist, to obtaine interferential 2D/3D patterns, we used He-Cd laser radiation and electron-beam submicrometer technology. The exposure was chosen from the range 20 to 300 mJ/cm~2, and spatial frequencies of obtained gratings were 800 to 1600 mm~(-1). In addition, resist performances were investigated using the Dot-matrix technology. Results of investigations showed that As_(40)S_(60-x)Se_x (x=0...20) photoresist is characterized by higher light and electron-beam sensitivity and this enables to get combined optical-digital protective elements: digital hologram; optical and digital hologram; combination of optical and digital holograms with submicrotext image.