首页> 外文会议>International Conference on Solid-State Sensors, Actuators and Microsystems >QUASI-ANALYTICAL STUDY OF OFFSET VOLTAGE DUE TO PIEZORESISTIVE EFFECT IN VERTICAL HALL DEVICES BY MAPPING TECHNIQUES
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QUASI-ANALYTICAL STUDY OF OFFSET VOLTAGE DUE TO PIEZORESISTIVE EFFECT IN VERTICAL HALL DEVICES BY MAPPING TECHNIQUES

机译:映射技术导致垂直霍尔设备压阻电压的准分析研究

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This paper presents a novel application of mapping techniques to assess the effect of piezoresistance on the offset voltage of vertical Hall sensors. The quasianalytical method consists first of an "isotropization" step performed by an affine transformation, followed by a more common series of conformal mappings. A detailed analysis of the mapping steps shows that sensors having all their contacts along a straight line will not exhibit any offset voltage due to piezoresistive effects if the sensor boundaries are placed far enough from the central contacts. In particular, the offset can be very efficiently reduced in 5-contact devices just by moving their vertical boundaries.
机译:本文介绍了映射技术的新颖应用,以评估压渗率对垂直霍尔传感器偏移电压的影响。 QuAsianalytical方法首先由仿射变换执行的“各向同性化”步骤,其次是更常见的一系列保形映射。对映射步骤的详细分析表明,如果传感器边界从中央触点放置得足够远,则具有沿直线的所有触点的传感器不会表现出由于压阻效应而导致的任何偏移电压。特别地,通过移动其垂直边界,可以在5个接触装置中非常有效地减小偏移。

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