Hydrogenated Amorphous Silicon by d.c. Plasma Glow Discharge of Argon Diluted Silane

摘要

Hydrogenated amorphous silicon (a-Si:H) have been deposited by direct current plasma glow discharge of silane diluted in argon. Films prepared using different argon to silane flow-rate ratios were studied using atomic force spectroscopy (AFM) to investigate the microstructure at surface of the film. Concurrently, the optical and chemical bonding properties were studied from the optical and infrared transmission spectra of the films. The refractive index of the films and the optical energy gap were determined from the optical transmission spectrum of each film while the hydrogen content and microstructure parameters were determined from the integrated intensity of the Si-H wagging and stretching respectively. The effects of argon dilution of silane at fixed rate growth temperature on the observed microstructure, optical properties, hydrogen content and microstructure to the optical properties, hydrogen content and microstructure parameter is discussed.