The use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-μm picosecond laser diodes

摘要

We report short (30-35 ps), high energy (more than 100 pJ) optical pulses at 1.5 μm from Q-switched laser diodes with multisection implantation-induced saturable absorbers. Dramatic improvement in pulse parameters over tandem lasers is due to suppression of spatial hole-burning and amplified spontaneous emission.