Absorber thickness dependence on CuInSe_2 based solar cells performance using CuIn precursors selenized using H_2Se gas

摘要

The performance of CuInSe_2 based devices as a function of reaction period and CuIn precursors of different thicknesses reacted in a Chemical Vapor deposition (CVD) reactor using H_2Se gas at reaction temperature of 350 deg C is investigated. Progressive number of moles of CuInSe_2 and InSe phases in the Selenized CuIn precursors using a kinetic model as well as experimental number of moles calculated from XRD counts is also given. The study compliments efforts in development and operation of CuInSe_2 based solar cell commercial scale were found to be consistent with device performance with respect to reaction period. Good devices of efficiency greater than 10 percent can be obtained using an absorber layer with a trace of InSe phase provided the InSe moles approaches zero. Although the time for the precursors to react fully is independent of thickness, there is a limit in solar cell efficiency which can be obtained for each precursor thickness.