A Novel Instrumentation for Contamination and Deposition Control on 300 mm Silicon Wafers Employing Synchrotron Radiation Based TXRF and EDXRF Analysis

摘要

A novel instrumentation for analyzing contamination on 200 mm and 300 mm silicon wafer surfaces by synchrotron based total reflection X-ray fluorescence (TXRF) has been designed by the Physikalisch-Technische Bundesanstalt. This instrumentation is also suited for energy-dispersive X-ray fluorescence (EDXRF) analysis of thin structures deposited on silicon wafers. The most prominent features are a high vacuum load-lock combined with an equipment front end module (EFEM) and an UHV irradiation chamber with an electrostatic chuck (ESC) mounted on an 8-axis manipulator. The whole surface of a 200 mm or a 300 mm wafer can be scanned by monochromatized undulator radiation. The instrumentation will be commissioned in the autumn of 2002, and off-line TXRF and EDXRF routine analyses shall start a few months later.