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Creation of Nanoscale Electronic Devices by the Swift Heavy Ion Technology

机译:通过SWIFT重离子技术创建纳米级电子设备

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摘要

Recent years have brought a renaissance of interest in swift heavy ion track technology, for the sake of prospective novel applications, i.e. creation of nanoscale electronic devices. This paper summarizes some of the newly emerging possibilities, and the strategies that have been initiated. Only a few applications that are based on latent tracks have emerged since then, such as the exploitation of phase transitions, chemical changes, the enhanced free volume along latent tracks, or their capability to trap diffusing penetrants. For contrast, etched tracks in both polymer foils and SiO{sub}2 layers appear to have a much greater application potential. Compact rods and tubules as well as dispersed nanosized matter can be embedded within the etched tracks, to form the base of various applications.
机译:近年来为前瞻性新应用提出了对Swift重型离子轨道技术的兴趣,即纳米级电子设备的创建。本文总结了一些新出现的可能性,以及已启动的策略。从那时起,只有少数基于潜在轨道的应用,例如相位过渡的开发,化学变化,沿潜在轨道的增强的自由体积,或者它们对疏远扩散剂的陷阱的能力。为了对比,聚合物箔和SiO {Sub} 2层中的蚀刻轨道似乎具有更大的应用潜力。紧凑型杆和小管以及分散的纳米型物质可以嵌入蚀刻轨道内,以形成各种应用的基础。

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