High performance strained-layer InGaAs (λ=1.2μm) and InGaAsN (λ=1.3μm) quantum-well lasers have been realized by MOCVD growth using Arsine and Dimethylhydrazine as the group V precursors. The use of GaAsP high bandgap barrier layers is shown to improve device performance over conventional GaAs barrier lasers. By comparison to conventional InP-based technology, InGaAsN lasers exhibit very low threshold current density at high temperature (390A/cm~2 at 80°C), using a single-quantum well design.
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